2SA965-Y,SWFF(M
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS PNP 800MA 120V TO226-3
- CategoryTransistors - Bipolar (BJT) - Single
- Datasheet 2SA965-Y,SWFF(M Datasheet
-
ECAD Model
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In Stock: 113
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- Transistor Type:PNP
- Current - Collector (Ic) (Max):800 mA
- Voltage - Collector Emitter Breakdown (Max):120 V
- Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
- Current - Collector Cutoff (Max):100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
- Power - Max:900 mW
- Frequency - Transition:120MHz
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 Long Body
- Supplier Device Package:LSTM
