RYM002N05T2CL

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):50 V
• Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):0.9V, 4.5V
• Rds On (Max) @ Id, Vgs:2.2Ohm @ 200mA, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:26 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):150mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:VMT3
• Package / Case:SOT-723