FQB33N10LTM
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 33A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQB33N10LTM Datasheet
-
ECAD Model
- Share
In Stock: 6,000
Can ship immediately
Pricing:
- 1$1.6
- 800$0.83647
- 1,600$0.75964
- 2,400$0.71162
- 5,600$0.67799
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Technical Details
- Series:QFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:52mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:40 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.75W (Ta), 127W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263AB)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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