IMW120R350M1HXKSA1

Technical Details

• Series:CoolSiC™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1.2 kV
• Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V, 18V
• Rds On (Max) @ Id, Vgs:455mOhm @ 2A, 18V
• Vgs(th) (Max) @ Id:5.7V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 18 V
• Vgs (Max):+23V, -7V
• Input Capacitance (Ciss) (Max) @ Vds:182 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):60W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO247-3-41
• Package / Case:TO-247-3