TP65H035G4WS
Transphorm
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 650V 46.5A TO247-3
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 634
Can ship immediately
Pricing:
- 1$17.65
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:41mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:4.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:22 nC @ 0 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):156W (Tc)
- Operating Temperature:-55°C ~ 150°C
- Mounting Type:Through Hole
- Supplier Device Package:TO-247-3
- Package / Case:TO-247-3
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