SI8819EDB-T2-E1
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 12V 2.9A 4MICRO FOOT
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI8819EDB-T2-E1 Datasheet
-
ECAD Model
- Share
In Stock: 4,175
Can ship immediately
Pricing:
- 1$0.45
- 3,000$0.13198
- 6,000$0.12399
- 15,000$0.11598
- 30,000$0.10638
- 75,000$0.10239
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 3.7V
- Rds On (Max) @ Id, Vgs:80mOhm @ 1.5A, 3.7V
- Vgs(th) (Max) @ Id:900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):900mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
- Package / Case:4-XFBGA
Related Products
MOSFET P-CH 20V 1.6A 4DSBGA
- 1: $0.47000
- 3000: $0.13270
- 6000: $0.12465
MOSFET N-CH 40V 8A DFN2020MD-6
- 1: $0.48000
- 3000: $0.22092
- 6000: $0.20849
MOSFET N-CH 12V 1.6A 4DSBGA
- 1: $0.49000
- 3000: $0.14106
- 6000: $0.13251
