SISS70DN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 125V 8.5A/31A PPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SISS70DN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 5,679
Can ship immediately
Pricing:
- 1$1.42
- 3,000$0.66549
- 6,000$0.63425
- 15,000$0.61193
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):125 V
- Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:29.8mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 62.5 V
- FET Feature:-
- Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
- Package / Case:PowerPAK® 1212-8S
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