APT28M120B2
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 1200V 29A T-MAX
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet APT28M120B2 Datasheet
-
ECAD Model
- Share
In Stock: 323
Can ship immediately
Pricing:
- 1$18.5
- 10$17.11189
- 100$14.61452
- 500$12.94955
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Technical Details
- Series:POWER MOS 8™
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:560mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:9670 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1135W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:T-MAX™ [B2]
- Package / Case:TO-247-3 Variant
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