SSM6J216FE,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CHANNEL 12V 4.8A ES6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6J216FE,LF Datasheet
-
ECAD Model
- Share
In Stock: 7,044
Can ship immediately
Pricing:
- 1$0.51
- 4,000$0.13739
- 8,000$0.12906
- 12,000$0.12073
- 28,000$0.11657
Quote It
Technical Details
- Series:U-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:32mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:12.7 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:1040 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta)
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:ES6
- Package / Case:SOT-563, SOT-666
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