SIHU2N80E-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 2.8A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHU2N80E-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 3,229
Can ship immediately
Pricing:
- 1$1.65
- 10$1.46331
- 100$1.15613
- 500$0.89662
- 1,000$0.70785
- 3,000$0.66066
- 6,000$0.62763
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Technical Details
- Series:E
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.75Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:19.6 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):62.5W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:IPAK (TO-251)
- Package / Case:TO-251-3 Long Leads, IPak, TO-251AB
