SIHP35N60E-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 32A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHP35N60E-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,190
Can ship immediately
Pricing:
- 1$6.34
- 10$5.66247
- 100$4.64325
- 500$3.75988
- 1,000$3.17098
- 3,000$3.01244
Quote It
Technical Details
- Series:E
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:94mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:132 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2760 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
Related Products
MOSFET N-CH 600V 32A TO220AB
- 1: $6.59000
MOSFET N-CH 600V 32A TO220
- 1: $6.61000
- 10: $5.92333
- 100: $4.89452