3LP01C-TB-E

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
• Rds On (Max) @ Id, Vgs:10.4Ohm @ 50mA, 4V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:1.43 nC @ 10 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:7.5 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):250mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:3-CP
• Package / Case:TO-236-3, SC-59, SOT-23-3