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Technical Details

  • Series:U-MOSIII
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
  • Rds On (Max) @ Id, Vgs:160mOhm @ 750mA, 4V
  • Vgs(th) (Max) @ Id:1.1V @ 100µA

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 10 V
  • FET Feature:Schottky Diode (Isolated)
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Supplier Device Package:UFV
  • Package / Case:6-SMD (5 Leads), Flat Lead

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