NTMS4N01R2G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 3.3A 8SOIC
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTMS4N01R2G Datasheet
-
ECAD Model
- Share
In Stock: 4,314
Can ship immediately
Pricing:
- 1$0.24
- 2,500$0.24
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:40mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:1.2 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):770mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SOIC
- Package / Case:8-SOIC (0.154", 3.90mm Width)
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