IPD80R3K3P7ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 1.9A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD80R3K3P7ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 2,629
Can ship immediately
Pricing:
- 1$0.30739
- 2,500$0.30739
- 5,000$0.28845
- 12,500$0.27898
- 25,000$0.27381
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Technical Details
- Series:CoolMOS™ P7
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3.3Ohm @ 590mA, 10V
- Vgs(th) (Max) @ Id:3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 500 V
- FET Feature:-
- Power Dissipation (Max):18W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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