IRFSL3607PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFSL3607PBF Datasheet
-
ECAD Model
- Share
In Stock: 1,611
Can ship immediately
Pricing:
- 1$0.49
- 10$0.44212
- 100$0.35515
- 500$0.27624
- 1,000$0.22888
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):75 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:9mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id:4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3.07 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):140W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-262
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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