FQPF19N10L
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 13.6A TO220F
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQPF19N10L Datasheet
-
ECAD Model
- Share
In Stock: 1,627
Can ship immediately
Pricing:
- 1$0.53
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Technical Details
- Series:QFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:13.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:100mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:18 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):38W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220F
- Package / Case:TO-220-3 Full Pack
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