IRFR825PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionHEXFET N-CHANNEL POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFR825PBF Datasheet
-
ECAD Model
- Share
In Stock: 1,499
Can ship immediately
Pricing:
- 1$0.57
- 300$0.57
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.3Ohm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.346 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):119W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-Pak
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
MOSFET N-CH 100V 11.3A/39A PPAK
- 1: $1.36000
11A, 30V, 0.0145OHM, N-CHANNEL,
- 1: $0.58000
AUTOMOTIVE N-CHANNEL 60 V (D-S)
- 1: $1.37000
MOSFET N-CH 40V 12A/54A 8PDFNU
- 1: $1.38000
MOSFET N-CH 60V 7A/32A 8PDFNU
- 1: $1.38000
MOSFET N-CH 30V 80A 8QFN
- 1: $0.58700