XPN9R614MC,L1XHQ

Technical Details

• Series:U-MOSVI
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:9.6mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
• Vgs (Max):+10V, -20V
• Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):840mW (Ta), 100W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-TSON Advance (3.3x3.6)
• Package / Case:8-PowerVDFN