BUZ30AHXKSA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPFET, 21A I(D), 200V, 0.13OHM, 1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BUZ30AHXKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 2,190
Can ship immediately
Pricing:
- 1$0.69
- 10$0.623
- 100$0.50069
- 500$0.38943
- 1,000$0.32268
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Technical Details
- Series:SIPMOS®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:130mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.9 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3-1
- Package / Case:TO-220-3
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