IPD90N04S3H4ATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionOPTLMOS N-CHANNEL POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD90N04S3H4ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 43,486
Can ship immediately
Pricing:
- 1$0.71
- 2,500$0.71
Quote It
Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id:4V @ 65µA
- Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3.9 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):115W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
MOSFET N-CH 600V 5A TO220FP
- 1: $0.71000
P-CHANNEL MOSFET
- 1: $0.71000
RF N-CHANNEL MOSFET
- 1: $0.71000
MOSFET N-CH 150V 37A TO220-3
- 1: $0.71000
MOSFET N-CH 30V 10A 8VSOF
- 1: $0.71000