UPA2716AGR-E1-AT

Rochester Electronics
In Stock: 7,148

Can ship immediately

Pricing:
  • 1$0.88

Quote It

Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:7mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:3 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PSOP
  • Package / Case:8-SOIC (0.173", 4.40mm Width)

Related Products


FQB65N06TM

MOSFET N-CH 60V 65A D2PAK

FQB65N06TM Datasheet
  • 1: $0.88000

HUF75329D3S

MOSFET N-CH 55V 20A TO252AA

HUF75329D3S Datasheet
  • 1: $0.88000

IPB034N06N3G

N-CHANNEL POWER MOSFET

  • 1: $0.88000

BUK7908-40AIE127

N-CHANNEL POWER MOSFET

  • 1: $0.88000

SI4467DY

P-CHANNEL POWER MOSFET

  • 1: $0.88000

BUK9907-40ATC,127

MOSFET N-CH 40V 75A TO220-5

BUK9907-40ATC,127 Datasheet
  • 1: $0.88000
  • 10: $0.79469
  • 100: $0.63850

FQI11N40TU

MOSFET N-CH 400V 11.4A I2PAK

FQI11N40TU Datasheet
  • 1: $0.88000

HAT1139H-EL-E

P-CHANNEL POWER MOSFET

  • 1: $0.88000

FQB55N06TM

MOSFET N-CH 60V 55A D2PAK

FQB55N06TM Datasheet
  • 1: $0.88000

BSC010NE2LSIATMA1

MOSFET N-CH 25V 38A/100A TDSON

BSC010NE2LSIATMA1 Datasheet
  • 1: $1.82000
  • 5000: $0.89267
  • 10000: $0.87393

Top