PSMN1R6-30PL,127
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PSMN1R6-30PL,127 Datasheet
-
ECAD Model
- Share
In Stock: 11,221
Can ship immediately
Pricing:
- 1$1.07
- 50$0.8626
- 100$0.77633
- 500$0.60381
- 1,000$0.5003
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:1.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:212 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:12.493 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):306W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
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