BUK652R3-40C,127

Rochester Electronics
In Stock: 5,351

Can ship immediately

Pricing:
  • 1$1.24

Quote It

Technical Details

  • Series:Automotive, AEC-Q101, TrenchMOS™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:2.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.8V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:15100 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):306W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Related Products


BUK653R2-55C,127

PFET, 120A I(D), 55V, 0.0048OHM,

  • 1: $1.24000

BUK652R0-30C,127

MOSFET N-CH 30V 120A TO220AB

  • 1: $1.24000

SIHU5N80AE-GE3

MOSFET N-CH 800V 4.4A TO251AA

  • 1: $1.24000

UPA2794AGR-E1-AT

N-CHANNEL POWER MOSFET

  • 1: $1.24000

BUK752R3-40C,127

PFET, 100A I(D), 40V, 0.0023OHM,

  • 1: $1.24000

PSMN4R6-100XS,127

MOSFET N-CH 100V 70.4A TO220F

  • 1: $1.24000

2SK3367-AZ

SMALL SIGNAL N-CHANNEL MOSFET

  • 1: $1.24000

IPB048N06LG

N-CHANNEL POWER MOSFET

  • 1: $1.24000

IRF433

N-CHANNEL POWER MOSFET

  • 1: $1.24000

RD3S100AAFRATL

MOSFET N-CH 190V 10A TO252

  • 1: $2.69000

Top