HAT2165N-EL-E

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:55A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:3.6mOhm @ 27.5A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:33 nC @ 4.5 V
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:5.18 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):30W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-LFPAK-iV
• Package / Case:8-PowerSOIC (0.154", 3.90mm Width)