IPB160N04S3H2ATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionOPTLMOS N-CHANNEL POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB160N04S3H2ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,142
Can ship immediately
Pricing:
- 1$1.39
- 1,000$1.34267
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:9.6 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):214W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-7-3
- Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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