IPP120N06S4H1AKSA2
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIPP120N06 - OPTIMOS N-CHANNEL
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPP120N06S4H1AKSA2 Datasheet
-
ECAD Model
- Share
In Stock: 38,130
Can ship immediately
Pricing:
- 1$1.91
- 500$1.91
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Technical Details
- Series:Automotive, AEC-Q101, OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:21.9 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3-1
- Package / Case:TO-220-3
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