SQV120N10-3M8_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 120A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SQV120N10-3M8_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 579
Can ship immediately
Pricing:
- 1$2.97
- 500$1.86252
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Technical Details
- Series:Automotive, AEC-Q101, TrenchFET®
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:7230 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-262-3
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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