IPP60R099CPXKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 31A TO220-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPP60R099CPXKSA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,338
Can ship immediately
Pricing:
- 1$7.79
- 500$5.85191
Quote It
Technical Details
- Series:CoolMOS™
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:99mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):255W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO220-3
- Package / Case:TO-220-3
Related Products
MOSFET N-CH 650V 20A TO247
- 1: $7.79000
MOSFET N-CH 150V 100A TO220
- 1: $7.87000
MOSFET N-CH 200V 21.3A TO3PML
- 1: $7.93000
POWER N AND P CHANNEL MOSFETS
- 1: $7.94000
SIC MOSFET N-CH 9A TO263-7
- 1: $7.97000