SSM3J35CT,L3F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CHANNEL 20V 100MA CST3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM3J35CT,L3F Datasheet
-
ECAD Model
- Share
In Stock: 9,883
Can ship immediately
Pricing:
- 1$0.36
- 10,000$0.04371
- 30,000$0.04114
- 50,000$0.03857
- 100,000$0.036
Quote It
Technical Details
- Series:π-MOSVI
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4V
- Rds On (Max) @ Id, Vgs:8Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:12.2 pF @ 3 V
- FET Feature:-
- Power Dissipation (Max):100mW (Ta)
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Supplier Device Package:CST3
- Package / Case:SC-101, SOT-883
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