RQ3E080BNTB
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 8A 8HSMT
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RQ3E080BNTB Datasheet
-
ECAD Model
- Share
In Stock: 1,356
Can ship immediately
Pricing:
- 1$0.53
- 3,000$0.11036
- 6,000$0.10423
- 15,000$0.09504
- 30,000$0.0889
- 75,000$0.08584
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:15.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-HSMT (3.2x3)
- Package / Case:8-PowerVDFN
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