2SK2009TE85LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 200MA SC59-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SK2009TE85LF Datasheet
-
ECAD Model
- Share
In Stock: 2,301
Can ship immediately
Pricing:
- 1$0.58
- 3,000$0.19425
- 6,000$0.18172
- 15,000$0.17545
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V
- Rds On (Max) @ Id, Vgs:2Ohm @ 50MA, 2.5V
- Vgs(th) (Max) @ Id:1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 3 V
- FET Feature:-
- Power Dissipation (Max):200mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SC-59-3
- Package / Case:TO-236-3, SC-59, SOT-23-3
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