SI3460BDV-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 8A 6TSOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI3460BDV-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 1,549
Can ship immediately
Pricing:
- 1$0.95
- 3,000$0.40699
- 6,000$0.38057
- 15,000$0.36737
- 30,000$0.36016
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:27mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:24 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta), 3.5W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-TSOP
- Package / Case:SOT-23-6 Thin, TSOT-23-6
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