NTMYS7D3N04CLTWG

ON Semiconductor
In Stock: 3,100

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Pricing:
  • 1$1.1

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:7.3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2V @ 30µA

 

  • Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 38W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:4-LFPAK
  • Package / Case:SOT-1023, 4-LFPAK

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