SI3430DV-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 1.8A 6TSOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI3430DV-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 2,087
Can ship immediately
Pricing:
- 1$1.17
- 3,000$0.54968
- 6,000$0.52387
- 15,000$0.50544
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:170mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):1.14W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-TSOP
- Package / Case:SOT-23-6 Thin, TSOT-23-6
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