RCD100N19TL

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):190 V
• Current - Continuous Drain (Id) @ 25°C:10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:182mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):850mW (Ta), 20W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:CPT3
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63