STI6N62K3
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 620V 5.5A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STI6N62K3 Datasheet
-
ECAD Model
- Share
In Stock: 147
Can ship immediately
Pricing:
- 1$1.39
- 50$1.1154
- 100$0.97603
- 500$0.75692
- 1,000$0.59756
- 2,500$0.55772
- 5,000$0.52984
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Technical Details
- Series:SuperMESH3™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):620 V
- Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:875 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):90W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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