FCD360N65S3R0
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 10A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FCD360N65S3R0 Datasheet
-
ECAD Model
- Share
In Stock: 1,892
Can ship immediately
Pricing:
- 1$1.56
- 2,500$0.72792
- 5,000$0.69353
- 12,500$0.66897
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Technical Details
- Series:SuperFET® III
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):83W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-PAK (TO-252)
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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