SQD100N04-3M6_GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 100A TO252AA
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SQD100N04-3M6_GE3 Datasheet
-
ECAD Model
- Share
In Stock: 2,078
Can ship immediately
Pricing:
- 1$1.72
- 2,000$0.75852
- 6,000$0.7206
- 10,000$0.6935
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:6700 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):136W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252AA
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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