FDMS10C4D2N

ON Semiconductor
In Stock: 1,917

Can ship immediately

Pricing:
  • 1$2.8
  • 3,000$1.67254
  • 6,000$1.60967

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:4.2mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-PQFN (5x6)
  • Package / Case:8-PowerTDFN

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