SCT2750NYTB
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 1700V 5.9A TO268
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SCT2750NYTB Datasheet
-
ECAD Model
- Share
In Stock: 1,648
Can ship immediately
Pricing:
- 1$6.79
- 400$4.47527
- 800$4.01565
- 1,200$3.38669
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):1700 V
- Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):18V
- Rds On (Max) @ Id, Vgs:975mOhm @ 1.7A, 18V
- Vgs(th) (Max) @ Id:4V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 18 V
- Vgs (Max):+22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds:275 pF @ 800 V
- FET Feature:-
- Power Dissipation (Max):57W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-268
- Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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