TSM60NB099PW C1G
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CHANNEL 600V 38A TO247
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM60NB099PW C1G Datasheet
-
ECAD Model
- Share
In Stock: 261
Can ship immediately
Pricing:
- 1$7.93
- 10$7.13475
- 100$5.86595
- 900$4.53419
- 1,800$4.43906
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:99mOhm @ 11.7A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2587 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):329W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247
- Package / Case:TO-247-3
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