TPH3212PS
Transphorm
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 650V 27A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPH3212PS Datasheet
-
ECAD Model
- Share
In Stock: 671
Can ship immediately
Pricing:
- 1$14.65
- 10$13.31627
- 50$12.31755
- 100$11.31883
- 250$10.32011
- 500$9.6543
- 1,000$9.32139
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Technical Details
- Series:-
- Package:Tube
- Part Status:Last Time Buy
- FET Type:N-Channel
- Technology:GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:72mOhm @ 17A, 8V
- Vgs(th) (Max) @ Id:2.6V @ 400uA
- Gate Charge (Qg) (Max) @ Vgs:14 nC @ 8 V
- Vgs (Max):±18V
- Input Capacitance (Ciss) (Max) @ Vds:1130 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):104W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
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