IPC022N03L3X1SA1

Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:1A (Tj)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:50mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:Sawn on foil
• Package / Case:Die