BSZ120P03NS3EGATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 11A/40A TSDSON-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSZ120P03NS3EGATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 14,824
Can ship immediately
Pricing:
- 1$0.24
- 5,000$0.24
Quote It
Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:11A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:3.1V @ 73µA
- Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:3.36 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.1W (Ta), 52W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TSDSON-8
- Package / Case:8-PowerTDFN
Related Products
BSZ088N03 - 12V-300V N-CHANNEL P
- 1: $0.24000
POWER FIELD-EFFECT TRANSISTOR, 1
- 1: $0.25000
MOSFET N-CH 30V 8.8A/41A I-PAK
- 1: $0.25000
- 900: $0.25000
MOSFET P-CH 20V 5.1A 6UDFN
- 1: $0.25000
- 3000: $0.25000
IPD14N06 - 55V-60V N-CHANNEL AUT
- 1: $0.25000