NTD4815N-35G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTD4815N-35G Datasheet
-
ECAD Model
- Share
In Stock: 29,298
Can ship immediately
Pricing:
- 1$0.28
- 75$0.21675
- 150$0.1895
- 525$0.14182
- 1,050$0.11457
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:6.9A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
- Rds On (Max) @ Id, Vgs:15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:14.1 nC @ 11.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:770 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):1.26W (Ta), 32.6W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Stub Leads, IPak
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