IRF7807VTRPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPLANAR <=40V
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF7807VTRPBF Datasheet
-
ECAD Model
- Share
In Stock: 3,217
Can ship immediately
Pricing:
- 1$0.3
- 4,000$0.3
- 8,000$0.27931
- 12,000$0.26897
- 28,000$0.26332
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V
- Rds On (Max) @ Id, Vgs:25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:14 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
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