BSC882N03LSGATMA1

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):34 V
• Current - Continuous Drain (Id) @ 25°C:-
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4.2mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3.7 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TDSON-8-1
• Package / Case:8-PowerTDFN