NVTFS4C05NTAG
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NVTFS4C05NTAG Datasheet
-
ECAD Model
- Share
In Stock: 225,185
Can ship immediately
Pricing:
- 1$0.33
- 1,500$0.14052
- 3,000$0.12734
- 7,500$0.11856
- 10,500$0.11417
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:22A (Ta), 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:3.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.988 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):3.2W (Ta), 68W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-WDFN (3.3x3.3)
- Package / Case:8-PowerWDFN
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