IPSA70R600CEAKMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 700V 10.5A TO251-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPSA70R600CEAKMA1 Datasheet
-
ECAD Model
- Share
In Stock: 3,164
Can ship immediately
Pricing:
- 1$0.32
- 10$0.28066
- 100$0.21657
- 500$0.16043
- 1,000$0.12835
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):700 V
- Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:600mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:474 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):86W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO251-3
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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